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薄膜镀膜技术的发展推动薄膜压力传感器性能提高

发布时间:2019-9-12      发布人:泽天公司      点击:

从二十世纪五十年代到八十年代,真空蒸发镀膜技术发展了近三十年,该项技术用于薄膜压力传感器福彩快三的制造一直受到薄膜质量的限制而得不到发展。1980年初,由瑞典和瑞士的材料公司NAF机构承担了用新型压力传感器取代老式机械压力传感器的发展计划。他们开始采用真空蒸发镀膜技术,得出结论是:高电阻薄膜用真空蒸发镀Ni-Cr膜是不行的。理由是传感器的薄膜电阻要达到5KΩ的同时要求膜很薄,而很薄的膜的不连续性导致传感器的稳定性、重复性都很差。

1980年代至1990年代期间,薄膜压力传感器的技术性能随着磁控溅射镀膜技术的发展,而不断提高,但是由于工艺技术的复杂性,这种技术制造薄膜压力传感器仅少数公司掌握而且成品率不高约30%。同期,国内有少数单位采用磁控溅射镀膜技术制造薄膜压力传感器,由于技术原因目前已基本停滞。

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离子束溅射薄膜技术和磁控溅射薄膜技术大致同期发展,但是直到美国卡夫曼等人发明了产生低能离子束的离子源,才使离子束溅射技术得到实际应用。利用这个低量能离子束轰击固体表面,产生动能的转换,使靶材表面原子逸出来,称为离子束溅射,通常离子束能量大约是1Kev-2Kev。成膜机理仍属PVD原理,只是淀积速度较慢,由于成膜的靶和基片处在非等离子区的高真空、低温环境,所以薄膜杂质和气体吸附污染少,薄膜的质量较高,主要特点是较致密,附着力好。所以介质薄膜可以淀积较厚4000 nm 以上,其绝缘性能大幅度提高。一般100VDC时达到500MΩ以上,甚至达到1000MΩ。不仅耐压比磁控溅射薄膜提高一倍,而且绝缘电阻提高5至10倍。作为应变电阻的Ni-Cr薄膜的平均厚度一般在100 nm 至150 nm 。桥臂电阻可以做到4KΩ左右。离子束溅射的薄膜缺陷,主要表现在PVD原理中薄膜所存在的那些固有缺陷。因此,它的性能差异,主要表现在高温时传感器的热稳定性能差,即热零点漂移较大,大约控制在±0.2%F·S范围。要进一步降低零点漂移,需要对应变材料进行改性。目前泽天传感福彩快三已做到热零点漂移小至0.0002%FS/℃,这是目前世界上领先的。

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